Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD850N10L, MOSFET

November 2013

FDD850N10L — N-Channel PowerTrench

MOSFET

FDD850N10L Rev. C1

www.fairchildsemi.com

FDD850N10L

N-Channel PowerTrench

MOSFET

100 V, 15.7 A, 75 mΩ

Features

•R

DS(on)

= 61 mΩ ( yp.) @ V

= 10 V, I

= 12 A

•R

DS(on)

= 64 mΩ (Typ.) @ V

= 5 V, I

= 12 A

• Low Gate Charge (Typ. 22.2 nC)

• Low C

rss

(Typ. 42 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchld Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance and maintain superior

switching performance.

Application

• Consumer Appliances

• LED TV and Monitor

• Synchronous Rectification

• Uninterruptible Power Supply

• Micro Solar Inverter

D-PAK

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD850N10L Unit

DSS

Drain to Source Voltage 100 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) 15.7

- Continuous (T

= 100

C) 11.1

Drain Current - Pulsed (Note 1) 63 A

Single Pulsed Avalanche Energy (Note 2) 41 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 50 W

- Derate Above 25

C0.33W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD850N10L

Unit

θJC

Thermal Resistance, Junction to Case, Max. 3.0

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 87

Summary of content (8 pages)

PAGE 1
FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. • RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ.
PAGE 2
Part Number FDD850N10L Top Mark FDD850N10L Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 6.0V 5.0V 3.5V 3.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 175 C o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.16 0.12 VGS = 5V 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 12A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 15 100μs ID, Drain Current [A] ID, Drain Current [A] 1.
PAGE 5
FDD850N10L — N-Channel PowerTrench® MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 5 www.fairchildsemi.
PAGE 6
FDD850N10L — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDD850N10L — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.