Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD86102, MOSFET

FDD86102 N-Channel Shielded Gate PowerTrench

MOSFET

FDD86102 Rev.C7

www.fairchildsemi.com

May 2013

FDD86102

N-Channel Shielded Gate PowerTrench

MOSFET

100 V, 36 A, 24 mΩ

Features

 Shielded Gate MOSFET Technology

 Max r

DS(on)

= 24 mΩ at V

= 10 V, I

= 8 A

 Max r

DS(on)

= 38 mΩ at V

= 6 V, I

= 6 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized

for r

DS(on)

, switching performance and ruggedness.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 36

A -Continuous T

= 25 °C (Note 1a) 8

-Pulsed (Note 4) 75

Single Pulse Avalanche Energy (Note 3) 121 mJ

Power Dissipation T

= 25 °C 62

Power Dissipation T

= 25 °C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 2.0

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD86102 FDD86102 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

TO-252

D-PAK

(TO-252)

Summary of content (6 pages)

PAGE 1
FDD86102 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 67 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate
PAGE 3
75 VGS = 7 V ID, DRAIN CURRENT (A) 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 45 VGS = 6 V 30 15 VGS = 5 V 0 0 1 2 3 4 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 8 V VGS = 10 V VGS = 5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 5 0 15 30 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.
PAGE 4
1000 ID = 8 A Ciss VDD = 25 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 100 2 0 0 3 6 9 12 10 0.1 15 f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics 10 100 Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 30 VGS = 10 V 20 VGS = 6 V 10 o RθJC = 2 C/W 1 0.001 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 2 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86102 Rev.C7 5 www.fairchildsemi.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.