Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD86102LZ, MOSFET

FDD86102LZ N-Channel PowerTrench

MOSFET

FDD86102LZ Rev.C1

www.fairchildsemi.com

August 2012

FDD86102LZ

N-Channel PowerTrench

MOSFET

100 V, 35 A, 22.5 mΩ

Features

 Max r

DS(on)

= 22.5 mΩ at V

= 10 V, I

= 8 A

 Max r

DS(on)

= 31 mΩ at V

= 4.5 V, I

= 7 A

 HBM ESD protection level > 6 kV typical (Note 4)

 Very low Qg and Qgd compared to competing trench

technologies

 Fast switching speed

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance and

switching loss. G-S zener has been added to enhance ESD

voltage level.

Applications

 DC - DC Conversion

 Inverter

 Synchronous Rectifier

TO-252

D-PAK

(TO-252)

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 42

-Continuous (Silicon limited) T

= 25 °C 35

-Continuous T

= 25 °C (Note 1a) 8

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation T

= 25 °C 54

Power Dissipation T

= 25 °C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 2.3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD86102LZ FDD86102LZ D-PAK(TO-252) 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
N-Channel PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 3.
PAGE 3
5 VGS = 10 V VGS = 4.5 V VGS = 3.5 V 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 3 V 20 VGS = 2.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 2.5 V 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 40 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
2000 VDD = 25 V ID = 8 A 1000 Ciss 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 100 10 0 0 5 10 15 1 0.1 20 1 Figure 7. Gate Charge Characteristics -1 10 TJ Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 40 = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.
PAGE 5
P(PK), PEAK TRANSIENT POWER (W) 10000 1000 100 SINGLE PULSE o RθJC = 2.3 C/W o TC = 25 C 10 -5 10 -4 -3 10 -2 10 -1 10 10 1 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 2.3 C/W 0.01 0.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.