Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD86110, MOSFET

September 2013

FDD86110 N-Channel Shielded Gate PowerTrench

MOSFET

FDD86110 Rev.C3

FDD86110

N-Channel Shielded Gate PowerTrench

MOSFET

100 V, 50 A, 10.2 mΩ

Features

 Shielded Gate MOSFET Technology

 Max r

DS(on)

= 10.2 mΩ at V

= 10 V, I

= 12.5 A

 Max r

DS(on)

= 16 mΩ at V

= 6 V, I

= 9.8 A

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized

for the on-state resistance and yet maintain superior

switching performance.

Application

 DC - DC Conversion

TO-252

D-PAK

(TO-252)

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 50

A -Continuous T

= 25 °C (Note 1a) 12.5

-Pulsed (Note 4) 150

Single Pulse Avalanche Energy (Note 3) 135 mJ

Power Dissipation T

= 25 °C 127

Power Dissipation T

= 25 °C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 0.98

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD86110 FDD86110 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
5 150 ID, DRAIN CURRENT (A) VGS = 7 V VGS = 8 V 120 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 90 VGS = 6 V 60 30 VGS = 5 V 0 0 1 2 3 4 5 VGS = 5 V 4 VGS = 6 V 3 VGS = 7 V 2 VGS = 8 V 1 0 0 30 Figure 1. On Region Characteristics 120 150 50 ID = 12.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 Figure 2.
PAGE 4
5000 ID = 12.5 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 Ciss 1000 Coss 100 2 0 f = 1 MHz VGS = 0 V 0 5 10 15 20 25 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 100 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 60 VGS = 10 V 40 Limited by Package VGS = 6 V 20 o RθJC = 0.98 C/W 1 0.001 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC RθJC = 0.98 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDD86110 Rev.C3 5 www.fairchildsemi.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.