Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD86250, MOSFET

FDD86250 N-Channel Shielded Gate PowerTrench

MOSFET

FDD86250 Rev.C1

www.fairchildsemi.com

May 2013

FDD86250

N-Channel Shielded Gate PowerTrench

MOSFET

150 V, 50 A, 22 mΩ

Features

 Shielded Gate MOSFET Technology

 Max r

DS(on)

= 22 mΩ at V

= 10 V, I

= 8 A

 Max r

DS(on)

= 31 mΩ at V

= 6 V, I

= 6.5 A

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized for the on-state resistance and yet maintain superior

switching performance.

Application

 DC - DC Conversion

TO-252

D-PAK

(TO-252)

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 50

A -Continuous T

= 25 °C (Note 1a) 8

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 180 mJ

Power Dissipation T

= 25 °C 132

Power Dissipation T

= 25 °C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 0.94

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD86250 FDD86250 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

Summary of content (6 pages)

PAGE 1
FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Shielded Gate MOSFET Technology Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
4 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 6 V VGS = 5.5 V 30 VGS = 5 V 20 10 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 4.5 V VGS = 5 V 3 2 VGS = 5.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.
PAGE 4
000 ID = 8 A VDD = 50 V Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 Coss 100 10 2 0 0 5 10 15 20 1 0.1 25 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 60 100 TJ = 10 50 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 25 oC TJ = 100 oC TJ = 125 oC 40 VGS = 10 V 30 Package Limited VGS = 6 V 20 10 o RθJC = 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC o RθJC = 0.94 C/W 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 5 www.fairchildsemi.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.