Datasheet

December 2008
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
www.fairchildsemi.com
1
FDD8647L N-Channel PowerTrench
®
MOSFET
FDD8647L
N-Channel PowerTrench
®
MOSFET
40 V, 42 A, 9 mΩ
Features
 Max r
DS(on)
= 9 mΩ at V
GS
= 10 V, I
D
= 13 A
 Max r
DS(on)
= 13 mΩ at V
GS
= 4.5 V, I
D
= 11 A
 Fast Switching
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low r
DS(on)
and optimized BV
DSS
capability to offer
superior performance benefit in the application.
Applications
 Inverter
 Power Supplies
G
S
D
TO-252
D-PAK
(
TO-252
)
D
G
S
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 42
A
-Continuous (Silicon limited) T
C
= 25 °C 52
-Continuous T
A
= 25 °C (Note 1a) 14
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 33 mJ
P
D
Power Dissipation T
C
= 25 °C 43
W
Power Dissipation T
A
= 25 °C (Note 1a) 3.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 2.9
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD8647L FDD8647L D-PAK (TO-252) 13 ’’ 12 mm 2500 units