Datasheet

February 2012
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
www.fairchildsemi.com
1
FDD86540 N-Channel PowerTrench
®
MOSFET
FDD86540
N-Channel PowerTrench
®
MOSFET
60 V, 50 A, 4.1 mΩ
Features
 Max r
DS(on)
= 4.1 mΩ at V
GS
= 10 V, I
D
= 21.5 A
 Max r
DS(on)
= 5 mΩ at V
GS
= 8 V, I
D
= 19.5 A
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Applications
 Primary Switch in isolated DC-DC
 Synchronous Rectifier
 Load Switch
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 50
A
-Continuous (Silicon limited) T
C
= 25 °C 136
-Continuous T
A
= 25 °C (Note 1a) 21.5
-Pulsed 120
E
AS
Single Pulse Avalanche Energy (Note 3) 228 mJ
P
D
Power Dissipation T
C
= 25 °C 127
W
Power Dissipation T
A
= 25 °C (Note 1a) 3.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 0.98
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD86540 FDD86540 D-PAK(TO-252) 13 ’’ 12 mm 2500 units