Datasheet

©2008 Fairchild Semiconductor Corporation
N
FDD8880 Rev. B3
FDD8880
FDD8880
N-Channel PowerTrench
®
MOSFET
30V, 58A, 9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
• DC/DC converters
Features
•r
DS(ON)
= 9mΩ, V
GS
= 10V, I
D
= 35A
•r
DS(ON)
= 12mΩ, V
GS
= 4.5V, I
D
= 35A
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
• High power and current handling capability
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
58 A
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1) 51 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 52
o
C/W) 13 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 2) 53 mJ
P
D
Power dissipation 55 W
Derate above 25
o
C0.37W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-252 2.73
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252 100
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 52
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8880 FDD8880 TO-252AA 13” 12mm 2500 units
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
tm
April 2008
• RoHS Compliant