April 2008 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ tm Features General Description ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. ! rDS(ON) = 15mΩ, VGS = 4.
Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V 55 A Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS A 41 mJ Power dissipation 55 W 0.37 W/oC -55 to 175 oC Derate above 25oC TJ, TSTG Operating and Storage Temperature A A Figure 4 Single Pulse Avalanche Energy (Note 2) PD 50 12.
CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance Qg(TOT) Total Gate Charge at 10V - 1260 - - 240 - pF - 140 - pF VGS = 0.5V, f = 1MHz - 2.4 - Ω VGS = 0V to 10V - 22 33 nC - 11.7 17.6 nC - 1.2 1.
60 CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 40 20 0.2 VGS = 10V 0 0 0 25 50 75 100 150 125 175 25 50 75 TC , CASE TEMPERATURE (oC) 100 125 150 175 TC, CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 PDM 0.
00 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 10µs 100 100µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 0.1 1 1 0.001 60 10 0.01 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 10 100 Figure 6.
1.10 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250µA 1.0 0.8 0.6 ID = 250µA 1.05 1.00 0.95 0.90 0.4 -80 -40 0 40 80 120 160 -80 200 -40 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40 80 120 160 200 Figure 12.
VDS BVDSS tP L VDS VARY tP TO OBTAIN IAS + RG REQUIRED PEAK IAS VDD VDD - VGS DUT tP IAS 0V 0 0.01Ω tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS L VGS VGS = 10V VGS Qg(5) + Qgs2 VDD VGS = 5V DUT VGS = 1V Ig(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 Figure 17. Gate Charge Test Circuit Figure 18.
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. RθJA = 33.32+ 23.84/(0.268+Area) EQ.2 RθJA = 33.32+ 154/(1.
.SUBCKT FDD8882 2 1 3 ; rev October 2004 Ca 12 8 9e-10 Cb 15 14 9e-10 Cin 6 8 1.55e-9 LDRAIN DPLCAP DRAIN 2 5 10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD 5 51 ESLC EVTHRES + 19 8 + LGATE GATE 1 11 + 17 EBREAK 18 - 50 RDRAIN 6 8 ESG DBREAK + RSLC2 Ebreak 11 7 17 18 34.1 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 RLDRAIN RSLC1 51 EVTEMP RGATE + 18 22 9 20 21 16 DBODY MWEAK 6 MMED MSTRO RLGATE Lgate 1 9 8.
rev October 2004 template FDD8882 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2.0e-12,ikf=10,nl=1.01,rs=5.7e-3,trs1=8e-4,trs2=2e-7,cjo=4.6e-10,m=0.58,tt=1e-11,xti=2.7) dp..model dbreakmod = (rs=1,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=5.0e-10,isl=10e-30,nl=10,m=0.45) m..model mmedmod = (type=_n,vto=2.11,kp=14,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.65,kp=240,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.82,kp=0.09,is=1e-30, tox=1,rs=0.1) sw_vcsp..
th JUNCTION REV 23 October 2004 FDD8882T CTHERM1 TH 6 5.6e-4 CTHERM2 6 5 6.8e-4 CTHERM3 5 4 2.0e-3 CTHERM4 4 3 2.8e-3 CTHERM5 3 2 5.7e-3 CTHERM6 2 TL 5.8e-3 RTHERM1 CTHERM1 6 RTHERM1 TH 6 5.3e-2 RTHERM2 6 5 2.2e-1 RTHERM3 5 4 2.9e-1 RTHERM4 4 3 3.9e-1 RTHERM5 3 2 6.0e-1 RTHERM6 2 TL 6.6e-1 RTHERM2 CTHERM2 5 SABER Thermal Model SABER thermal model FDD8882T template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =5.6e-4 ctherm.ctherm2 6 5 =6.8e-4 ctherm.ctherm3 5 4 =2.0e-3 ctherm.
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