Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDFMA2P029Z, MOSFET

July 2014

FDFMA2P029Z Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

FDFMA2P029Z Rev.B2

www.fairchildsemi.com

FDFMA2P029Z

Integrated P-Channel PowerTrench

MOSFET and Schottky Diode

–20V, –3.1A, 95m:

Features

MOSFET

 Max r

DS(on)

= 95m: at V

= –4.5V, I

= –3.1A

Max r

DS(on)

= 141m: at V

= –2.5V, I

= –2.5A

Schottky

 V

< 0.37V @ 500mA

 Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 RoHS Co

mpliant

General Description

This device is designed specifically as a single package solution

for the battery charge switch in cellular handset and other ultra-

portable applications. It features a MOSFET with very low on-

state resistance and an independently connected low forward

voltage schottky diode allows for minimum conduction losses.

The MicroFET 2X2 package offers exceptional thermal

per

formance for its physical size and is well suited to linear mode

applications.

MOSFET Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage –20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) –3.1

-Pulsed -6

Power Dissipation (Note 1a) 1.4

(Note 1b) 0.7

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

RRM

Schottky Repetitive Peak Reverse Voltage 20 V

Schottky Average Forward Current 2 A

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 86

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1b) 173

TJA

Thermal Resistance, Junction to Ambient (Note 1c) 86

TJA

Thermal Resistance, Junction to Ambient (Note 1d) 140

Device Marking Device Package Reel Size Tape Width Quantity

.P29 FDFMA2P029Z MicroFET 2X2 7” 8mm 3000 units

MicroFET 2X2

Pin 1



HBM ESD protection level > 2.5kV (Note 3)



Summary of content (8 pages)

PAGE 1
FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.1A, 95m: Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. Max rDS(on) = 95m: at VGS = –4.5V, ID = –3.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient –20 V ID = –250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±10 PA –1.
PAGE 3
(b) MOSFET RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RTJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RTJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper.
PAGE 4
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 6 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 5 VGS = -2.0V 4 VGS = -4.5V 3 VGS = -3.0V VGS = -2.5V 2 VGS = -1.5V 1 0 0.0 0.5 1.0 1.5 2.6 VGS =-2.0V 2.2 1.8 VGS = -3.5V 1.4 VGS = -3.0V 1.0 0.6 2.0 0 1 1.6 ID = -3.1A VGS = -4.5V 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 6 200 ID = -1.55A PULSE DURATION = 300Ps DUTY CYCLE = 2.
PAGE 5
-VGS, GATE TO SOURCE VOLTAGE(V) 10 1000 IDD = -3.1A Ciss 8 CAPACITANCE (pF) VDD = -5V VDD = -15V 6 VDD = -10V 4 2 0 2 4 6 8 10 Qg, GATE CHARGE(nC) 12 100 50 0.1 14 f = 1MHz VGS = 0V 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 20 10 50 rDS(on) LIMIT 100us 1ms 1 10ms VGS=-4.5V 0.1 100ms 1s 10s DC SINGLE PULSE R o =173 TJA C/W o TA = 25 C 0.01 0.1 1 10 60 40 o TA=25 C 30 20 SINGLE PULSE 10 0 -4 10 -3 10 10 TJ = 125oC 1 TJ = 85oC 0.
PAGE 6
2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA 0.01 0.005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2P029Z Rev.B2 6 www.fairchildsemi.
PAGE 7
FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.