Datasheet

FDFMA2P853 Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
©2008 Fairchild Semiconductor Corporation 1 FDFMA2P853 Rev. D3 (W)
FDFMA2P853
Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
General Description Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
perfo rmance for it's physical size and is well suited to linear
mode applications.
MOSFET:
 -3.0 A, -20V. R
DS(ON)
= 120 m: @ V
GS
= -4.5 V
R
DS(ON)
= 160 m: @ V
GS
= -2.5 V
R
DS(ON)
= 240 m: @ V
GS
= -1.8 V
Schottky:
V
F
< 0.46 V @ 500 mA
 Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
 RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
MOSFET Drain-Source Voltage -20 V
V
GSS
MOSFET Gate-Source Voltage r8V
I
D
Drain Current -Continuous (Note 1a)
-Pulsed
-3.0
A
-6
V
RRM
Schottky Repetitive Peak Reverse voltage 30V
I
O
Schottky Average Forward Current (Note 1a) 1 A
P
D
Power dissipation for Single Operation (Note 1a)
Power dissipation for Single Operation (Note 1b)
1.4
W
0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
o
C
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 86
o
C/W
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 173
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1c) 86
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1d) 140
Device Marking Device Reel Size Tape Width Quantity
.853 FDFMA2P853 7inch 8mm 3000 units
5
1
6
2
3
4
MicroFET
C
A
G
NC D
S
C
G
S
A
NC
D
C D
September 2008
July 2014