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ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDFMA3N109, MOSFET
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©2008 Fairchild Semiconductor Corporation
FDFMA3N109 Rev B3
FDFMA3N109
Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
Features
MOSFET:
• 2.9 A, 30 V R
DS(ON)
= 123 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 140 mΩ @ V
GS
= 3.0 V
R
DS(ON)
= 163 mΩ @ V
GS
= 2.5 V
Schottky:
• V
F
< 0.46 V @ 500mA
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-Source Voltage
±12
V
Drain Current – Continuous (T
C
= 25°C, V
GS
= 4.5V) 2.9
– Continuous (T
C
= 25°C, V
GS
= 2.5V) 2.7
I
D
– Pulsed 10
A
Power Dissipation for Single Operation
(Note 1a)
1.5 P
D
Power Dissipation for Single Operation
(Note 1b)
0.65
W
T
J
, T
STG
Operating and Storage Temperature –55 to +150
°C
V
RRM
Schottky Repetitive Peak Reverse Voltage 28 V
I
O
Schottky Average Forward Current 1 A
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
83
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
193
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
101
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
228
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
109 FDFMA3N109 7’’ 8mm 3000 units
FDFMA3N109 Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
MicroFET 2x2
A K
NC G
D S
PIN 1
A NC D
K D
K G S
HBM ESD pro
tection level = 1.8kV typical
(Note 3
)
•
July 2014

Summary of content (7 pages)