Datasheet

June 2001
2001 Fairchild Semiconductor Corporation
FDFS2P106A Rev B(W)
FDFS2P106A
Integrated 60V P-Channel PowerTrench



MOSFET and Schottky Diode
General Description
The FDFS2P106A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
• –3.0 A, –60V R
DS(ON)
= 110 mΩ @ V
GS
= –10 V
R
DS(ON)
= 140 mΩ @ V
GS
= –4.5 V
• V
F
< 0.45 V @ 1 A (T
J
= 125°C)
V
F
< 0.53 V @ 1 A
V
F
< 0.62 V @ 2 A
• Schottky and MOSFET incorporated into single
power surface mount SO-8 package
• Electrically independent Schottky and MOSFET
pinout for design flexibility
A
A
S
G
C
C
D
D
Pin 1
SO-8
81
72
63
54
A
A
S
G
C
C
D
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
MOSFET Drain-Source Voltage
–60
V
V
GSS
MOSFET Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a)
–3
A
– Pulsed
–10
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°C
V
RRM
Schottky Repetitive Peak Reverse Voltage 45 V
I
O
Schottky Average Forward Current (Note 1a) 1 A
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDFS2P106A FDFS2P106A 13’’ 12mm 2500 units
FDFS2P106A