Datasheet

tm
November 2006
FDFS2P753Z Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
©2006 Fairchild Semiconductor Corporation
FDFS2P753Z Rev.A
www.fairchildsemi.com
1
FDFS2P753Z
Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
-30V, -3A, 115m
Features
Max r
DS(on)
= 115m at V
GS
= -10V, I
D
= -3.0A
Max r
DS(on)
= 180m at V
GS
= -4.5V, I
D
= -1.5A
V
F
< 500mV @ 1A
V
F
< 580mV @ 2A
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and
MOSFET pinout for
design flexibility
RoHS Compliant
General Description
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for
DC to DC
converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous (Note 1a) -3
A
-Pulsed -16
P
D
Power Dissipation (Note 1a) 1.6 W
E
AS
Single Pulse Avalanche Energy (Note 2) 6 mJ
V
RRM
Schottky Repetitive Peak Reverse Voltage -20 V
I
O
Schottky Average Forward Current (Note 1a) -2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction to Case (Note 1) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDFS2P753Z FDFS2P753Z SO-8 330mm 12mm 2500 units
A
A
S
G
C
C
D
D
Pin 1
SO-8
1
5
6
7
8
4
3
2
A
A
C
C
D
D
G
S

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