Datasheet

tm
January 2007
FDFS6N548 Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
©2007 Fairchild Semiconductor Corporation
FDFS6N548 Rev.B
www.fairchildsemi.com
1
FDFS6N548
Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
30V, 7A, 23m
Features
Max r
DS(on)
= 23m at V
GS
= 10V, I
D
= 7A
Max r
DS(on)
= 30m at V
GS
= 4.5V, I
D
= 6A
V
F
< 0.45V @ 2A
V
F
< 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent Schottky and MOSFET pinout for
design flexibility
Low Miller Charge
General Description
The FDFS6N548 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
DC/DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 7
A
-Pulsed 30
P
D
Power Dissipation for Dual Operation 2
W
Power Dissipation for Single Operation (Note 1a) 1.6
E
AS
Drain-Source Avalanche Energy (Note 3) 12 mJ
V
RRM
Schotty Repetitive Peak Reverse Voltage 20 V
I
O
Schotty Average Forward Current (Note 1a) 2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction to Case (Note 1) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDFS6N548 FDFS6N548 SO-8 330mm 12mm 2500 units
A
A
S
G
C
C
D
D
Pin 1
SO-8
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D

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