Datasheet
tm
August 2006
FDFS6N754 Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
©2006 Fairchild Semiconductor Corporation
FDFS6N754 Rev. A
www.fairchildsemi.com1
Final Datasheet
FDFS6N754
Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
Max r
DS(on)
= 56mΩ at V
GS
= 0V, I
D
= 4A
Max r
DS(on)
= 75mΩ at V
GS
= 4.5V, I
D
= 3.5A
V
F
< 0.45V @ 2A
V
F
< 0.28V @ 100mA
Schottky and MOSFET incorporated into single power
surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout
for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
General Description
The FDFS6N754 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance. The independently connected Schottky diode
allows its use in a variety of DC/DC converter topologies.
Applications
DC/DC converters
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 4
A
-Pulsed 20
P
D
Power Dissipation for Dual Operation 2
W
Power Dissipation for Single Operation (Note 1a) 1.6
V
RRM
Schottky Repetitive Peak Reverse Voltage 20 V
I
O
Schottky Average Forward Current (Note 1a) 2 A
T
J
, T
STG
Operating and Storage Temperature -55 to 150 °C
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDFS6N754 FDFS6N754 SO-8 330mm 12mm 2500 units
A
A
S
G
C
C
D
D
Pin 1
SO-8
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D