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ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG311N, MOSFET
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FDG311N
FDG311N Rev. D
FDG311N
N-Channel 2.5V Specified PowerTrench
MOSFET
February 2000
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25 C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
±
8
V
I
D
Drain Current - Continuous
(Note 1a)
1.9 A
- Pulsed 6
Power Dissipation for Single Operation
(Note 1a)
0.75 W
P
D
(Note 1b)
0.48
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.
11
FDG311N 7 8mm 3000 units
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
• Load switch
• Power management
• DC/DC converter
Features
• 1.9 A, 20 V. R
DS(ON)
= 0.115 Ω @ V
GS
= 4.5 V
R
DS(ON)
= 0.150 Ω @ V
GS
= 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely low
R
DS(ON)
.
• Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
D
G
D
D
3
5
6
4
1
2
3

Summary of content (5 pages)