Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG312P, MOSFET

FDG312P

FDG312P Rev. C

FDG312P

P-Channel 2.5V Specified PowerTrench MOSFET

February 1999

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage -20 V

GSS

Gate-Source Voltage

Drain Current - Continuous

(Note 1)

-1.2 A

- Pulsed -6

Power Dissipation for Single Operation

(Note 1a)

0.75 W

(Note 1b)

0.55

(Note 1c)

0.48

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1)

260

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDG312P 7’’ 8mm 3000 units

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor's advanced PowerTrench process that

has been especially tailored to minimize the on-state

resistance and yet maintain low gate charge for

superior switching performance. These devices are

well suited for portable electronics applications.

Applications

• Load switch

• Battery protection

• Power management

Features

• -1.2 A, -20 V. R

DS(on)

= 0.18 Ω @ V

= -4.5 V

DS(on)

= 0.25 Ω @ V

= -2.5 V.

• Low gate charge (3.3 nC typical).

• High performance trench technology for extremely

low R

DS(ON)

• Compact industry standard SC70-6 surface mount

package.

SC70-6

Summary of content (5 pages)

PAGE 1
FDG312P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. • Applications • Load switch • Battery protection • Power management D -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics -20 V mV/°C -1
PAGE 3
FDG312P Typical Characteristics 5 R DS(on), NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) V GS= -4.5V -3.5V -3.0V -2.5V 4 3 -2.0V 2 1 -1.5V DRAIN-SOURCE ON-RESISTANCE 2.4 6 2.2 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 0 1 2 -V DS 3 3 4 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 R DS(ON) , ON-RESISTANCE (OHM) I D = -1.2A V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -0.6A 0.4 0.3 TJ = 125°C 0.2 0.
PAGE 4
(continued) 5 1000 I D = -1.2A VDS = -5V 4 -10V CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) FDG312P Typical Characteristics -15V 3 2 Ciss 300 100 Coss Crss 30 1 f = 1 MHz VGS = 0 V 0 0 1 2 3 10 0.1 4 0.2 Q g , GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. 5 1 L N) 10 20 IT IM o 10 0m s 1s 10s DC V GS = -4.5V SINGLE PULSE R θJA = 260°C/W T A = 25°C 0.2 0.5 RθJA= 260 C/W 24 10m s 0.3 0.01 0.
PAGE 5
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