Datasheet

FDG315N
FDG315N Rev. C
FDG315N
N-Channel Logic Level PowerTrench



MOSFET
July 2000
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current - Continuous
(Note 1a)
2A
- Pulsed 6
Power Dissipation for Single Operation
(Note 1a)
0.75 W
P
D
(Note 1b)
0.48
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.
15
FDG315N 7’’ 8mm 3000 units
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Power Management
Features
•
2 A, 30 V. R
DS(ON)
= 0.12 Ω @ V
GS
= 10 V
R
DS(ON)
= 0.16 Ω @ V
GS
= 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low
R
DS(ON)
.
• Compact industry standard SC70-6 surface mount
package.
SC70-6
D
S
D
G
D
D
3
5
6
4
1
2
3