Datasheet

October 2001
2001 Fairchild Semiconductor Corporation
FDG327N Rev C (W)
FDG327N
20V N-Channel PowerTrench

MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V. R
DS(ON)
= 90 mΩ @ V
GS
= 4.5 V.
R
DS(ON)
= 100 mΩ @ V
GS
= 2.5 V
R
DS(ON)
= 140 mΩ @ V
GS
= 1.8 V
• Fast switching speed
• Low gate charge (4.5 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
SC70-6
D
D
G
D
D
S
Pin 1
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 8
V
I
D
Drain Current – Continuous (Note 1a) 1.5 A
– Pulsed 6
Power Dissipation for Single Operation (Note 1a) 0.42 W
P
D
(Note 1b)
0.38
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 300
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 333
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.27 FDG327N 7’’ 8mm 3000 units
FDG327N