Datasheet

October 2000
2000 Fairchild Semiconductor International
FDG328P Rev C(W)
FDG328P
P-Channel 2.5V Specified PowerTrench
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MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).
Applications
• Load switch
• Power management
• DC/DC converter
Features
• –1.5 A, –20 V. R
DS(ON)
= 0.145 Ω @ V
GS
= –4.5 V
R
DS(ON)
= 0.210 Ω @ V
GS
= –2.5 V
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• Compact industry standard SC70-6 surface mount
package
SC70-6
D
D
G
D
D
S
Pin 1
6
5
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1a) –1.5 A
– Pulsed –6
Power Dissipation for Single Operation (Note 1a) 0.75 WP
D
(Note 1b)
0.48
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 260
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.28 FDG328P 7’’ 8mm 3000 units
FDG328P