Datasheet

December 2001
2001 Fairchild Semiconductor Corporation
FDG330P Rev D (W)
FDG330P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –2 A, –12 V. R
DS(ON)
= 110 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 150 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 215 mΩ @ V
GS
= –1.8 V
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• Compact industry standard SC70-6 surface mount
package
SC70-6
D
D
G
D
D
S
Pin 1
3
5
6
4
1
2
3
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –12 V
V
GSS
Gate-Source Voltage
± 8
V
I
D
Drain Current – Continuous (Note 1a) –2 A
– Pulsed –6
Power Dissipation for Single Operation (Note 1a) 0.75 W P
D
(Note 1b)
0.48
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
Note 1b) 260
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.30 FDG330P 7’’ 8mm 3000 units
FDG330P