Datasheet

tm
December 2008
FDG332PZ P-Channel PowerTrench
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B
1
www.fairchildsemi.com
1
FDG332PZ
P-Channel PowerTrench
®
MOSFET
-20V, -2.6A, 97m:
Features
Max r
DS(on)
= 95m: at V
GS
= -4.5V, I
D
= -2.6A
Max r
DS(on)
= 115m: at V
GS
= -2.5V, I
D
= -2.2A
Max r
DS(on)
= 160m: at V
GS
= -1.8V, I
D
= -1.9A
Max r
DS(on)
= 330m: at V
GS
= -1.5V, I
D
= -1.0A
Very low level gate drive requirements allowing operation
in 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
General Description
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench
®
process. It has been optimized for
battery power management applications.
Applications
Battery management
Load switch
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous -2.6
A
-Pulsed -9
P
D
Power Dissipation (Note 1a) 0.75
W
Power Dissipation (Note 1b) 0.48
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJA
Thermal Resistance, Junction to Ambient Single operation (Note 1a) 170
°C/W
R
TJA
Thermal Resistance, Junction to Ambient Single operation (Note 1b) 260
Device Marking Device Package Reel Size Tape Width Quantity
.
2P FDG332PZ SC70-6 7’’ 8 mm 3000 units
D
D
G
D
D
S
D
S
D
D
G
D
Pin 1
SC70-6

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