Datasheet

March 2009
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
www.fairchildsemi.com
1
FDG410NZ Single N-Channel PowerTrench
®
MOSFET
FDG410NZ
Single N-Channel PowerTrench
®
MOSFET
20 V, 2.2 A, 70 mΩ
Features
 Max r
DS(on)
= 70 mΩ at V
GS
= 4.5 V, I
D
= 2.2 A
 Max r
DS(on)
= 77 mΩ at V
GS
= 2.5 V, I
D
= 2.0 A
 Max r
DS(on)
= 87 mΩ at V
GS
= 1.8 V, I
D
= 1.8 A
 Max r
DS(on)
= 115 mΩ at V
GS
= 1.5 V, I
D
= 1.5 A
 HBM ESD protection level > 2 kV (Note 3)
 High performance trench technology for extremely low r
DS(on)
 High power and current handling capability
 Fast switching speed
 Low gate charge
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r
DS(on)
and gate charge (Q
g
) in a small package.
Applications
 DC/DC converter
 Power management
 Load switch
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 20 V
V
GS
Gate to Source Voltage ±8 V
I
D
-Continuous T
A
= 25 °C (Note 1a) 2.2
A
-Pulsed 6.0
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 0.42
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.38
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 300
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 333
Device Marking Device Package Reel Size Tape Width Quantity
.41 FDG410NZ SC70-6 7 ” 8 mm 3000 units
D
G
S
D
D
D
3
1
2
6
5
4
SC70-6
D
D
G
D
D
S