Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6316P, MOSFET

December 2001

2001 Fairchild Semiconductor Corporation

FDG6316P Rev D W)

FDG6316P

P-Channel 1.8V Specified PowerTrench







MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

Features

• –0.7 A, –12 V. R

DS(ON)

= 270 mΩ @ V

= –4.5 V

DS(ON)

= 360 mΩ @ V

= –2.5 V

DS(ON)

= 650 mΩ @ V

= –1.8 V

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• Compact industry standard SC70-6 surface mount

package

Pin 1

SC70-6

6 or 3

5 or 2

4 or 1

1 or 4

2 or 5

3 or 6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –12 V

GSS

Gate-Source Voltage

± 8

Drain Current – Continuous (Note 1) –0.7 A

– Pulsed –1.8

Power Dissipation for Single Operation (Note 1) 0.3 W

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1) 415

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.16 FDG6316P 7’’ 8mm 3000 units

FDG6316P

Summary of content (5 pages)

PAGE 1
FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.7 A, –12 V. Applications • Low gate charge • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = –1.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown VGS = 0 V, ID = –250 µA Voltage Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 8 V, VDS = 0 V 100 nA VDS = VGS, ID = –250 µA –1.
PAGE 3
FDG6316P Typical Characteristics 3 VGS=-4.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 -1.8V -ID, DRAIN CURRENT (A) -2.5V 1.5 -1.5V 1 0.5 VGS=-1.5V 2.6 2.2 -1.8V 1.8 -2.0V 1.4 -2.5V -4.5V 0.6 0 0 0.5 1 1.5 2 2.5 3 0 3.5 0.5 Figure 1. On-Region Characteristics. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.75 ID = -0.4A ID = -0.7A VGS = -4.5V 1.
PAGE 4
FDG6316P Typical Characteristics 250 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.7A VDS = -4V -6V f = 1 MHz VGS = 0 V 200 4 CAPACITANCE (pF) -8V 3 2 CISS 150 100 COSS 1 50 0 0 CRSS 0 0.5 1 1.5 2 0 Qg, GATE CHARGE (nC) 4 6 10 12 Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 10 RDS(ON) LIMIT 100µs 1ms 1 10ms DC VGS = -4.5V SINGLE PULSE RθJA = 415oC/W 0.1 100ms 1s TA = 25oC 0.01 0.1 1 10 6 4 2 0 0.
PAGE 5
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