Datasheet

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FDG6317NZ

Dual 20v N-Channel PowerTrench



MOSFET

General Description

This dual N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use

in small switching regulators, providing an extremely

low R

DS(ON)

and gate charge (Q

) in a small package.

Applications

• DC/DC converter

• Power management

• Load switch

Features

• 0.7 A, 20 V. R

DS(ON)

= 400 mΩ @ V

= 4.5 V

DS(ON)

= 550 mΩ @ V

= 2.5 V

•

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• Compact industry standard SC70-6 surface mount

package

Pin 1

SC70-6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage

± 12

Drain Current – Continuous (Note 1) 0.7 A

– Pulsed 2.1

Power Dissipation for Single Operation (Note 1) 0.3 W

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 415

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.67 FDG6317NZ 7’’ 8mm 3000 units

FDG6317NZ Rev.B1 (W)

www.fairchildsemi.c

FDG6317NZ Dual 20v N-Channel PowerTrench

MOSFET

May 2009

RoHS Compliant

•

Gate-Source Zener for ESD ruggedness

(1.6kV Human Body Model). (Note 3)

Summary of content (5 pages)

PAGE 1
FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. • 0.7 A, 20 V. RDS(ON) = 400 mΩ @ VGS = 4.5 V RDS(ON) = 550 mΩ @ VGS = 2.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown VGS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 12 V, VDS = 0 V ± 10 µA IGSS Gate–Body Leakage VGS = ± 4.5 V, VDS = 0 V ±1 µA 1.
PAGE 3
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 2.5V 2.0V 4.5V 1.5 1.7 3.0V VGS = 10V 1 2.0V 0.5 VGS = 2.5V 1.5 3.0V 1.3 3.5V 4.0V 1.1 4.5V 6.0V 0 0.5 1 1.5 2 0 2.5 0.5 Figure 1. On-Region Characteristics. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 1.5 ID = 0.7A VGS =10V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.3 1.2 1.
PAGE 4
100 ID = 0.7A 15V VDS = 5V f = 1MHz VGS = 0 V 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 10V 3 2 1 75 Ciss 50 Coss 25 Crss 0 0 0.2 0.4 0.6 0.8 0 1 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 10 RDS(ON) LIMIT 1 1s 1ms 10ms 100m 100µs DC 0.1 VGS = 10V SINGLE PULSE RθJA = 415oC/W 0.01 o TA = 25 C 0.001 0.1 1 20 10 SINGLE PULSE RθJA = 415°C/W TA = 25°C 8 6 4 2 0 0.0001 100 0.001 0.01 0.
PAGE 5
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.