Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6320C, MOSFET

November 1998

FDG6320C

Dual N & P Channel Digital FET

General Description Features

Absolute Maximum Ratings T

= 25

C unless other wise noted

Symbol Parameter N-Channel P-Channel Units

Drain-Source Voltage 25 -25 V

GSS

Gate-Source Voltage 8 -8 V

Drain Current - Continuous 0.22 -0.14 A

- Pulsed 0.65 -0.4

Maximum Power Dissipation (Note 1) 0.3 W

STG

Operating and Storage Temperature Ranger -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6 kV

THERMAL CHARACTERISTICS

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

FDG6320C Rev. D

N-Ch 0.22 A, 25 V, R

DS(ON)

= 4.0 Ω @ V

= 4.5 V,

DS(ON)

= 5.0 Ω @ V

= 2.7 V.

P-Ch -0.14 A, -25V, R

DS(ON)

= 10 Ω @ V

= -4.5V,

DS(ON)

= 13 Ω @ V

= -2.7V.

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V

GS(th)

< 1.5 V).

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

These dual N & P-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. This device has been designed

especially for low voltage applications as a replacement for

bipolar digital transistors and small signal MOSFETS. Since

bias resistors are not required, this dual digital FET can

replace several different digital transistors, with different bias

resistor values.

SC70-6

SuperSOT

-6

SOIC-14

SO-8

SOT-8

SOT-23

SC70-6

.20

Summary of content (9 pages)

PAGE 1
November 1998 FDG6320C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
PAGE 2
Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min VGS = 0 V, ID = 250 µA N-Ch 25 VGS = 0 V, ID = -250 µA P-Ch -25 ID = 250 µA, Referenced to 25 oC N-Ch 25 ID = -250 µA, Referenced to 25 oC P-Ch -19 N-Ch Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel VDD = 5 V, ID = 0.5 A , Min Typ Max Units N-Ch 5 12 nS P-Ch 5 12 tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 Ω N-Ch 4.5 10 P-Ch 8 16 tD(off) Turn - Off Delay Time P-Channel N-Ch 4 8 VDD = -5 V, ID = -0.5 A, P-Ch 9 18 tf Turn - Off Fall Time VGS = -4.5 V, RGEN = 50 Ω N-Ch 3.
PAGE 4
Typical Electrical Characteristics: N-Channel 5 VGS =4.5V 3.5V R DS(ON), NORMALIZED 0.4 3.0V 2.7V 0.3 2.5V 0.2 2.0V 0.1 0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 0.5 4.5 1 2 3 4 2.7V 3.0V 3.5 3.5V 3 4.0V 5 0 0.1 Figure 1. On-Region Characteristics. 0.3 0.4 20 I D = 0.22A 1.6 RDS(ON), ON-RESISTANCE(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 V GS = 4.5V 1.4 1.2 1 0.8 0.
PAGE 5
Typical Electrical Characteristics: N-Channel (continued) 30 VGS , GATE-SOURCE VOLTAGE (V) 6 VDS = 5V I D = 0.22A 10V CAPACITANCE (pF) 5 4 3 2 15 Ciss 8 Coss 5 Crss f = 1 MHz VGS = 0 V 3 1 2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.3 1 3 1 50 IT IM )L ON ( S RD 10 s 1s 0.1 10 s 0.01 0.4 V GS = 4.5V SINGLE PULSE RθJA = 415 °C/W T A = 25°C 0.8 2 SINGLE PULSE R θJA=415°C/W TA = 25°C 40 0m POWER (W) I D , DRAIN CURRENT (A) 10m s 0.03 25 Figure 8. Capacitance Characteristics.
PAGE 6
Typical Electrical Characteristics: P-Channel 2.5 VGS = -4.5V -3.5V R DS(ON), NORMALIZED -3.0V 0.15 -2.7V -2.5V 0.1 -2.0V 0.05 DRAIN-SOURCE ON-RESISTANCE -ID , DRAIN-SOURCE CURRENT (A) 0.2 0 0 1 2 3 VGS = -2.0V 2 -2.7V -3.0V 1.5 -3.5V -4.0V -4.5V 1 0.5 4 -2.5V -V DS , DRAIN-SOURCE VOLTAGE (V) 0 0.05 0.1 0.15 -I D, DRAIN CURRENT (A) 0.2 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 11. On-Region Characteristics.
PAGE 7
Typical Electrical Characteristics: P-Channel (continued) 40 I D = -0.14A 20 VDS = -5V -10V -15V 6 CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 8 4 Ciss 10 Coss 5 3 2 1 0.5 0.1 0 0 0.1 0.2 0.3 0.4 0.5 Crss f = 1 MHz VGS = 0 V 0.2 Figure 17. Gate Charge Characteristics. 1 2 5 10 20 Figure 18. Capacitance Characteristics. 1 50 N) S(O RD 0.3 10m s IT LIM 10 s 1s 0.1 10s DC VGS = -4.5V SINGLE PULSE RθJA = See Note 1b TA = 25°C 0.03 2 3 30 20 10 0.
PAGE 8
Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 200 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1.
PAGE 9
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