Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6321C, MOSFET

November 1998

FDG6321C

Dual N & P Channel Digital FET

General Description Features

Absolute Maximum Ratings T

= 25

C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

Drain-Source Voltage 25 -25 V

GSS

Gate-Source Voltage 8 -8 V

Drain Current - Continuous 0.5 -0.41 A

- Pulsed 1.5 -1.2

Maximum Power Dissipation (Note 1) 0.3 W

STG

Operating and Storage Temperature Ranger -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6 kV

THERMAL CHARACTERISTICS

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

FDG6321C Rev. D

N-Ch 0.50 A, 25 V, R

DS(ON)

= 0.45 Ω @ V

= 4.5V.

DS(ON)

= 0.60 Ω @ V

= 2.7 V.

P-Ch -0.41 A, -25 V,R

DS(ON)

= 1.1 Ω @ V

= -4.5V.

DS(ON)

= 1.5 Ω @ V

= -2.7V.

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct

operation in 3 V circuits(V

GS(th)

< 1.5 V).

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

These dual N & P-Channel logic level enhancement mode field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage

applications as a replacement for bipolar digital transistors and

small signal MOSFETS. Since bias resistors are not required,

this dual digital FET can replace several different digital

transistors, with different bias resistor values.

SC70-6

SuperSOT

-6

SOIC-14

SO-8

SOT-8

SOT-23

SC70-6

.21

Summary of content (9 pages)

PAGE 1
November 1998 FDG6321C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
PAGE 2
Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min VGS = 0 V, ID = 250 µA N-Ch 25 VGS = 0 V, ID = -250 µA P-Ch -25 ID= 250 µA, Referenced to 25 oC N-Ch 26 ID = -250 µA, Referenced to 25 oC P-Ch -22 N-Ch Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel N-Ch VDD = 5 V, ID = 0.5 A, P-Ch Min Typ Max Units 3 6 nS 7 15 8.5 18 tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 Ω N-Ch P-Ch 8 16 tD(off) Turn - Off Delay Time P-Channel N-Ch 17 30 VDD = -5 V, ID = -0.5 A, P-Ch 55 80 tf Turn - Off Fall Time VGS = -4.
PAGE 4
Typical Electrical Characteristics: N-Channel 2 VGS = 4.5V 2.5V 3.0V 2.7V 2.0V R DS(ON) , NORMALIZED 1.2 0.9 0.6 1.5V 0.3 0 DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) 1.5 VGS = 2.0V 1.5 2.5V 2.7V 3.5V 0.5 1 1.5 2 2.5 4.5V 1 0.5 0 3 0 0.2 R DS(on) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.5A VGS = 4.5 V 1.2 1 0.8 0.6 -50 1 1.2 ID = 0.3A 1.6 1.
PAGE 5
Typical Electrical Characteristics: N-Channel (continued) 200 ID = 0.5A VDS = 5V 10V 15V 4 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 70 Ciss 30 Coss 10 C rss f = 1 MHz VGS = 0V 1 3 0.1 0 0 0.4 0.8 1.2 1.6 2 0.3 1 2 5 Figure 7. Gate Charge Characteristics. 50 IT IM )L ON ( S RD 10m s 10 0.02 s 10 s DC 0.1 VGS = 4.5V SINGLE PULSE Rθ JA = 415 °C/W TA = 25°C 0.01 0.1 DS 30 20 10 1 V SINGLE PULSE R θJA=415°C/W TA = 25°C 40 1s 0.2 0.
PAGE 6
Typical Electrical Characteristics: P-Channel -2.7V -2.5V R DS(ON), NORMALIZED -ID , DRAIN-SOURCE CURRENT (A) VGS =-4.5V -3.0V 0.9 0.6 -2.0V 0.3 -1.5V DRAIN-SOURCE ON-RESISTANCE 2.5 1.2 0 1 2 3 -2.5V 1.5 -2.7V -3.0V -3.5V -4.5V 1 0.5 0 VGS = -2.0V 2 4 0 0.2 0.4 I D = -0.41A R DS(ON),ON-RESISTANCE(OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 1.2 5 1.6 V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 I D = -0.
PAGE 7
Typical Electrical Characteristics: P-Channel (continued) 200 I D = -0.41A VDS = -5V -10V 4 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 80 Ciss 30 Coss 10 3 0.1 0 0 0.4 0.8 1.2 0.3 1.6 Figure 17. Gate Charge Characteristics. ) ON S( RD 10 1m ms IT LIM s 10 25 10 0m s 1s 10 s DC 0.1 VGS = -4.5V SINGLE PULSE RθJA = 415°C A TA = 25°C 0.2 0.5 SINGLE PULSE R θJA=415°C/W TA = 25°C 40 POWER (W) -I D , DRAIN CURRENT (A) 5 50 1 0.01 0.1 2 Figure 18.
PAGE 8
Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 200 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1.
PAGE 9
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