Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6322C, MOSFET

FDG6322C

Dual N & P Channel Digital FET

General Description Features

Absolute Maximum Ratings T

= 25

C unless other wise noted

Symbol Parameter N-Channel P-Channel Units

Drain-Source Voltage 25 -25 V

GSS

Gate-Source Voltage 8 -8 V

Drain Current - Continuous 0.22 -0.41 A

- Pulsed 0.65 -1.2

Maximum Power Dissipation (Note 1) 0.3 W

STG

Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6 kV

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note1) 415 °C/W

FDG6322C Rev.F3

N-Ch 0.22 A, 25 V, R

DS(ON)

= 4.0 Ω @ V

= 4.5 V,

DS(ON)

= 5.0 Ω @ V

= 2.7 V.

P-Ch -0.41 A,-25V, R

DS(ON)

= 1.1 Ω @ V

= -4.5V,

DS(ON)

= 1.5 Ω @ V

= -2.7V.

Very small package outline SC70-6.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V

GS(th)

< 1.5 V).

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

These dual N & P-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. This device has been designed

especially for low voltage applications as a replacement for

bipolar digital transistors and small signal MOSFETs. Since

bias resistors are not required, this dual digital FET can

replace several different digital transistors, with different bias

resistor values.

SC70-6

SuperSOT

-6

SOIC-14

SO-8

SOT-8

SOT-23

SC70-6

Mark: .22

September 2013

Summary of content (9 pages)

PAGE 1
September 2013 FDG6322C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
PAGE 2
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min N-Ch 25 -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA P-Ch ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω tr tD(off) tf Qg Qgs Qgd Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Min Typ Max Units N-Ch 5 10 nS P-Ch 7 15 N-Ch 4.5 10 P-Ch 8 16 P-Channel N-Ch 4 8 VDD = -5 V, ID = -0.5 A, P-Ch 55 80 VGS = -4.
PAGE 4
Typical Electrical Characteristics: N-Channel 5 VGS =4.5V 3.5V R DS(ON), NORMALIZED 0.4 3.0V 2.7V 0.3 2.5V 0.2 2.0V 0.1 0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 0.5 4.5 1 2 3 4 2.7V 3.0V 3.5 3.5V 3 4.0V 5 0 0.1 Figure 1. On-Region Characteristics. 0.3 0.4 20 I D = 0.22A 1.6 RDS(ON), ON-RESISTANCE(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 V GS = 4.5V 1.4 1.2 1 0.8 0.
PAGE 5
Typical Electrical Characteristics: N-Channel (continued) 30 VDS = 5V I D = 0.22A 10V 5 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 6 4 3 2 15 Ciss 8 Coss 5 Crss f = 1 MHz VGS = 0 V 3 1 2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.3 10 25 50 0.3 RD S( O L N) IM 10m s IT 1s 0.1 10 V GS = 4.5V SINGLE PULSE RθJA = 415 °C/W T A = 25°C 0.8 2 SINGLE PULSE R θJA=415°C/W TA= 25°C 40 100 ms POWER (W) I D , DRAIN CURRENT (A) 1 0.01 0.4 3 Figure 8. Capacitance Characteristics.
PAGE 6
Typical Electrical Characteristics: P-Channel 2.5 VGS =-4.5V -3.0V -2.7V R DS(ON) , NORMALIZED -2.5V 0.9 0.6 -2.0V 0.3 -1.5V DRAIN-SOURCE ON-RESISTANCE -ID , DRAIN-SOURCE CURRENT (A) 1.2 VGS = -2.0V 2 -2.5V 1.5 -2.7V -3.0V -3.5V -4.5V 1 0.5 0 0 1 2 3 0 4 0.2 0.4 R DS(ON),ON-RESISTANCE(OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 1.2 5 1.6 I D = -0.41A V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -0.
PAGE 7
Typical Electrical Characteristics: P-Channel (continued) 200 -V GS , GATE-SOURCE VOLTAGE (V) 5 I D = -0.41A VDS = -5V -10V 4 80 CAPACITANCE (pF) 1 -15V 3 2 Ciss 30 Coss 10 5 3 0.1 0 0 0.4 0.8 1.2 1.6 0.3 Figure 17. Gate Charge Characteristics. 5 10 25 50 1 0.5 S RD (O N) LI 1m s 10 ms T MI 10 0m s 1s 10 s DC 0.1 VGS = -4.5V SINGLE PULSE RθJA = 415°C A A = 25°C T 0.2 0.5 SINGLE PULSE R θJA=415°C/W TA= 25°C 40 POWER (W) -I D , DRAIN CURRENT (A) 2 Figure 18.
PAGE 8
Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 200 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1.
PAGE 9
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