Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6332C_F085, MOSFET

2009 Fairchild Semiconductor Corporation

FDG6332C_F085 Rev C2 (W)

FDG6332C_F085

20V N & P-Channel PowerTrench



MOSFETs

Features

• Q1 0.7 A, 20V. R

DS(ON)

= 300 mΩ @ V

= 4.5 V

DS(ON)

= 400 mΩ @ V

= 2.5 V

• Q2 –0.6 A, –20V. R

DS(ON)

= 420 mΩ @ V

= –4.5 V

DS(ON)

= 630 mΩ @ V

= –2.5 V

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• SC70-6 package: small footprint (51% smaller than

SSOT-6); low profile (1mm thick)

Pin 1

SC70-6

Complementary

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol Parameter Q1 Q2 Units

DSS

Drain-Source Voltage 20 –20 V

GSS

Gate-Source Voltage

±12 ±12

Drain Current – Continuous

(Note 1)

0.7 –0.6 A

– Pulsed 2.1 –2

Power Dissipation for Single Operation

(Note 1)

0.3 W

, T

STG

Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

415

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.32 FDG6332C_F085 7’’ 8mm 3000 units

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs

March 2009

• Qualified to AEC Q101

• RoHS Compliant

General Description

The N & P-Channel MOSFETs are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

These devices have been designed to offer

exceptional power dissipation in a very small footprint

for applications where the bigger more expensive

TSSOP-8 and SSOP-6 packages are impractical.

Applications

• DC/DC converter

• Load switch

• LCD display inverter

Summary of content (8 pages)

PAGE 1
FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features • Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF /IGSSR Gate–Body Leakage, Forward IGSSF /IGSSR Gate–Body Leakage, Reverse On Characteristics ID = 250 µA VGS = 0 V, VGS = 0 V, ID = –250 µA ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref.
PAGE 3
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 0.25 Q2 –0.25 Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2 Q2 VGS = 0 V, IS = –0.25 A (Note 2) –0.77 –1.2 A V Notes: 1.
PAGE 4
1.8 4 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 2.5V 3 2 2.0V 1 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 0 0 1 2 3 0 4 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 1.6 ID =0.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID =0.4A 0.
PAGE 5
200 VDS = 5V ID = 0.7A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 150 CISS 100 COSS 50 1 CRSS 0 0 0 0.4 0.8 1.2 0 1.6 Figure 7. Gate Charge Characteristics. 10 15 20 Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 100µs 1ms 1 10ms 100ms 1s VGS = 4.5V SINGLE PULSE RθJA = 415oC/W 0.1 DC TA = 25oC 0.01 0.
PAGE 6
2 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) -3.5V 1.6 -2.5V 1.2 0.8 -2.0V 0.4 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 0.8 0 0 1 2 3 0 4 0.5 Figure 11. On-Region Characteristics. 2 1.2 ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 ID = -0.3 A 1 0.
PAGE 7
160 ID = -0.6A VDS = -5V f = 1MHz VGS = 0 V -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 COSS 40 1 CRSS 0 0 0 0.3 0.6 0.9 1.2 1.5 0 1.8 5 Figure 17. Gate Charge Characteristics. 15 20 Figure 18. Capacitance Characteristics. 10 10 100µs RDS(ON) LIMIT 10ms 100ms 1s VGS = -4.5V SINGLE PULSE RθJA = 415 oC/W DC 6 4 2 TA = 25oC 0.01 0.1 o TA = 25 C 1ms 1 0.
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