Datasheet

September 2003
2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
FDG6332C
20V N & P-Channel PowerTrench

MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
Features
• Q1 0.7 A, 20V. R
DS(ON)
= 300 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 400 mΩ @ V
GS
= 2.5 V
• Q2 –0.6 A, –20V. R
DS(ON)
= 420 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 630 mΩ @ V
GS
= –2.5 V
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
D
G
S
Pin 1
SC70-6
Complementary
6
5
43
2
1
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Q1 Q2 Units
V
DSS
Drain-Source Voltage 20 –20 V
V
GSS
Gate-Source Voltage
±12 ±12
V
I
D
Drain Current – Continuous (Note 1) 0.7 –0.6 A
– Pulsed 2.1 –2
P
D
Power Dissipation for Single Operation (Note 1) 0.3 W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1) 415
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.32 FDG6332C 7’’ 8mm 3000 units
FDG6332C