Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDG6335N, MOSFET

October 2001

2001 Fairchild Semiconductor Corporation

FDG6335N Rev C (W)

FDG6335N

20V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use

in small switching regulators, providing an extremely

low R

DS(ON)

and gate charge (Q

) in a small package.

Applications

• DC/DC converter

• Power management

• Loadswitch

Features

• 0.7 A, 20 V. R

DS(ON)

= 300 mΩ @ V

= 4.5 V

DS(ON)

= 400 mΩ @ V

= 2.5 V

• Low gate charge (1.1 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• Compact industry standard SC70-6 surface mount

package

Pin 1

SC70-6

Dual N-Channel

1 or 4

2 or 5

3 or 6

6 or 3

5 or 2

4 or 1

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage ± 12 V

Drain Current – Continuous (Note 1) 0.7 A

– Pulsed 2.1

Power Dissipation for Single Operation (Note 1) 0.3 W

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.35 FDG6335N 7’’ 8mm 3000 units

FDG6335N

Summary of content (5 pages)

PAGE 1
FDG6335N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. • 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Low gate charge (1.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ID = 250 µA VGS = 0 V, ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA 1.
PAGE 3
FDG6335N Typical Characteristics 1.8 4 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 2.5V 3 2 2.0V 1 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 0 0 1 2 3 0 4 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 1.6 ID =0.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.
PAGE 4
FDG6335N Typical Characteristics 200 VDS = 5V ID = 0.7A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 150 CISS 100 COSS 50 1 CRSS 0 0 0 0.4 0.8 1.2 0 1.6 Figure 7. Gate Charge Characteristics. 10 15 20 Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 100µs 1ms 1 10ms 100ms 1s VGS = 4.5V SINGLE PULSE RθJA = 415oC/W 0.
PAGE 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.