Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDH055N15A, MOSFET

November 2013

FDH055N15A — N-Channel PowerTrench

MOSFET

FDH055N15A Rev. C1

www.fairchildsemi.com

FDH055N15A

N-Channel PowerTrench

MOSFET

150 V, 167 A, 5.9 mΩ

Features

•R

DS(on)

= 4.8 mΩ (Typ.) @ V

= 10 V, I

= 120 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance while maintaining

superior switching performance.

Applications

• Synchronous Rectification for ATX / Sever / Telecom PSU

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

• Micro Solar Inverter

TO-247

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDH055N15A Unit

DSS

Drain to Source Voltage 150 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C, Silicon Limited) 167*

A- Continuous (T

= 100

C, Silicon Limited) 118

- Continuous (T

C = 25

C, Package Limited) 156

Drain Current - Pulsed (Note 1) 668 A

Single Pulsed Avalanche Energy (Note 2) 835 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 429 W

- Derate Above 25

C2.86W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDH055N15A

Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.35

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 40

*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A.

Summary of content (9 pages)

PAGE 1
FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features Description • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Part Number FDH055N15A Top Mark FDH055N15A Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 500 o 25 C o 175 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 1 VDS, Drain-Source Voltage[V] 1 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 6.0 5.
PAGE 4
Figure 8. On-Resistance Variation vs. Temperature 1.15 2.8 1.10 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.4 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 120A 0.
PAGE 5
FDH055N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) ZθJC (t), Thermal Response Thermal Response [ZθJC[o]C/W] Figure 12. Transient Thermal Response Curve 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 0.01 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDH055N15A Rev.
PAGE 6
FDH055N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDH055N15A Rev. C1 6 www.fairchildsemi.
PAGE 7
FDH055N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16.
PAGE 8
FDH055N15A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.