Datasheet

December 2013
Thermal Characteristics
FDH44N50
N-Channel SMPS Power MOSFET
500 V, 44 A, 120 mΩ
Description
©2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. C1
www.fairchildsemi.com
1
FDH44N50 — N-Channel SMPS Power MOSFET
UniFET
TM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET
family
based
on
planar
stripe
and
DMOS
technology.
This
MOSFET
is
tailored
to
reduce
on-state
resistance,
and to provide better switching performance and
higher avalanche energy strength. This device family is
suitable for switching power converter applications such as
power factor correction (PFC), flat panel display (FPD) TV
power, ATX and electronic lamp ballasts.
Features
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
•
Low Gate Charge Q
g
Results in Simple Drive Requirement
(Typ. 90 nC)
•
Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
•
Reduced R
DS(on)
(110 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 22 A)
•
Reduced Miller Capacitance and Low Input Capacitance
(Typ. C
rss
= 40 pF)
•
Improved Switching Speed with Low EMI
• 175
o
C Rated Junction Temperature
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
G
D
S
TO-247
G
S
D
Symbol Parameter
FDH44N50 Unit
V
DSS
Drain to Source Voltage 500 V
V
GS
Gate to Source Voltage ±30 V
I
D
Drain Current
44 A
32 A
Continuous (T
C
= 25
o
C, V
GS
= 10 V)
Continuous (T
C
= 100
o
C, V
GS
= 10 V)
Pulsed
1
176 A
P
D
Power Dissipation
750 W
Derate Above 25
o
C
5
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Soldering Temperature for 10 Seconds 300 (1.6mm from case)
o
C
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)
W/
o
C
 
FDH44N50

+
θ

Thermal Resistance, Junction-to-Case, Max.
0.2
6?
+
θ

Thermal Resistance, Junction-to-Ambient, Max.
40
6?