Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDH45N50F_F133, MOSFET

November 2013

FDH45N50F — N-Channel UniFET

FRFET

MOSFET

FDH45N50F Rev. C1

www.fairchildsemi.com

FDH45N50F

N-Channel UniFET

FRFET

MOSFET

500 V, 45 A, 120 mΩ

Features

•R

DS(on)

= 105 mΩ (Typ.) @ V

= 10 V, I

= 22.5 A

• Low Gate Charge (Typ. 105 nC)

• Low C

rss

(Typ. 62 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

Applications

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche en-

ergy strength. The body diode’s reverse recovery performance

of UniFET FRFET

MOSFET has been enhanced by lifetime

control. Its t

is less than 100nsec and the reverse dv/dt immuni-

ty is 15V/ns while normal planar MOSFETs have over 200nsec

and 4.5V/nsec respectively. Therefore, it can remove additional

component and improve system reliability in certain applications

in which the performance of MOSFET’s body diode is significant.

This device family is suitable for switching power converter ap-

plications such as power factor correction (PFC), flat panel dis-

play (FPD) TV power, ATX and electronic lamp ballasts

TO-247

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDH45N50F_F133 Unit

DSS

Drain-Source Voltage 500 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

28.4

Drain Current - Pulsed

(Note 1)

180 A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

1868 mJ

Avalanche Current

(Note 1)

45 A

Repetitive Avalanche Energy

(Note 1)

62.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

50 V/ns

Power Dissipation (T

= 25°C)

- Derate Above 25°C

625

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FDH45N50F_F133 Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.2

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 40

Summary of content (9 pages)

PAGE 1
FDH45N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 45 A, 120 mΩ Features Description • RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.
PAGE 2
Part Number Top Mark FDH45N50F FDH45N50F_F133 Electrical Characteristics Symbol Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
FDH45N50F — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 2 10 ID, Drain Current [A] 2 10 ID, Drain Current [A] Figure 2. Transfer Characteristics 1 10 o 150 C 1 10 o 25 C o -55 C ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 22.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9.
PAGE 5
Figure 13. Typical Switching Losses vs. Gate Resistance Figure 14. Unclamped Inductive Switching Capability 1,000 100 Notes : 1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R ≠ 0 Ω tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1] IAS, Avalanche Current [A] 800 Energy [μJ] Eoff 600 Eon 400 Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 200 o o Starting TJ = 150 C 10 Starting TJ = 25 C o 4. TJ = 125 C? 0 0 5 10 15 20 25 30 35 40 45 1 0.01 50 0.
PAGE 6
FDH45N50F — N-Channel UniFETTM FRFET® MOSFET IG = const. Figure 16. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 17. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 18.
PAGE 7
FDH45N50F — N-Channel UniFETTM FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 19.
PAGE 8
FDH45N50F — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions Figure 20. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.