Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDI045N10A_F102, MOSFET

November 2013

FDP045N10A / FDI045N10A — N-Channel PowerTrench

MOSFET

FDP045N10A / FDI045N10A Rev. C1

www.fairchildsemi.com

TO-220

FDP045N10A / FDI045N10A

N-Channel PowerTrench

MOSFET

100 V, 164 A, 4.5 mΩ

Features

•R

DS(on)

= 3.8 mΩ ( Typ.) @ V

= 10 V, I

= 100 A

• Fast Switching Speed

• Low Gate Charge, Q

= 54 nC (Typ.)

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench

process that has

been tailored to minimize the on-state resistance while main-

taining superior switching performance.

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor drives and Uninterruptible Power Supplies

• Micro Solar Inverter

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FDP045N10A_F102

FDI045N10A_F102

Unit

DSS

Drain to Source Voltage 100 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C, Silicon Limited) 164*

A- Continuous (T

= 100

C, Silicon LImited) 116

- Continuous (T

= 25

C, Package Limited) 120

Drain Current - Pulsed (Note 1) 656 A

Single Pulsed Avalanche Energy (Note 2) 637 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 263 W

- Derate Above 25

C1.75W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDP045N10A_F102

FDI045N10A_F102

Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.57

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

-PAK

Summary of content (10 pages)

PAGE 1
FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.
PAGE 2
Part Number FDP045N10A_F102 Top Mark FDP045N10A Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDI045N10A_F102 FDI045N10A I2-PAK Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 1 VDS, Drain-Source Voltage[V] 1 2 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 500 IS, Reverse Drain Current [A] VGS = 10V 4.0 VGS = 20V 3.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.
PAGE 5
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) ZθJC(t), Thermal Response [oC/W] Thermal Response [ZθJC] Figure 13. Transient Thermal Response Curve 1 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 0.01 o 1. ZθJC(t) = 0.57 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDP045N10A / FDI045N10A Rev.
PAGE 6
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP045N10A / FDI045N10A Rev. C1 6 www.fairchildsemi.
PAGE 7
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17.
PAGE 8
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 19. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.