Datasheet

June 2014
FDI9406_F085 N-Channel PowerTrench
®
MOSFET
©2014 Fairchild Semiconductor Corporation
FDI9406_F085 Rev. C3
www.fairchildsemi.com1
FDI9406_F085
N-Channel PowerTrench
®
MOSFET
40 V, 110 A, 2.2 mΩ
Features
 Typ R
DS(on)
= 1.73mΩ at V
GS
= 10V, I
D
= 80A
 Typ Q
g(tot)
= 107nC at V
GS
= 10V, I
D
= 80A
 UIS Capability
 RoHS Compliant
 Qualified to AEC Q101
Applications
 Automotive Engine Control
 Powertrain Management
 Solenoid and Motor Drivers
 Electronic Steering
 Integrated Starter/Alternator
 Distributed Power Architectures and VRM
 Primary Switch for 12V Systems
MOSFET Maximum Ratings T
J
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-to-Source Voltage 40 V
V
GS
Gate-to-Source Voltage ±20 V
I
D
Drain Current - Continuous (V
GS
=10) (Note 1) T
C
= 25°C 110
A
Pulsed Drain Current T
C
= 25°C See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 2) 174 mJ
P
D
Power Dissipation 176 W
Derate above 25
o
C1.18W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to + 175
o
C
R
θJC
Thermal Resistance, Junction to Case 0.85
o
C/W
R
θJA
Maximum Thermal Resistance, Junction to Ambient (Note 3) 43
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDI9406 FDI9406_F085 TO-262AB Tube N/A 50 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L = 0.045mH, I
AS
= 88A, V
DD
= 40V during inductor charging and V
DD
= 0V during time in avalanche.
3:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design. The maximum
rating presented here is based on mounting on a 1 in
2
pad of 2oz copper.
D
G
S
TO-262AB
FDI SERIES
Forcurrentpackagedrawing,pleaserefertotheFairchild
websiteatwww.fairchildsemi.com/packaging