Datasheet
June 2014
FDM3622 N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDM3622 Rev.C5
www.fairchildsemi.com
1
FDM3622
N-Channel PowerTrench
®
MOSFET
100V, 4.4A, 60mΩ
Features
Max r
DS(on)
= 60mΩ at V
GS
= 10V, I
D
= 4.4A
Max r
DS(on)
= 80mΩ at V
GS
= 6.0V, I
D
= 3.8A
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Co
mpliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench
®
process that has
been
especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Applications
Distributed Power Architectures and VRMs.
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Formerly developmental type 82744
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 4.4
A
-Pulsed 20
E
AS Single Pulse Avalanche Energy (Note 3) 54 mJ
P
D
Power Dissipation (Note 1a) 2.1
W
Power Dissipation (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 3.0
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
FDM3622 FDM3622 MLP 3.3x3.3 13’’ 12 mm 3000 units
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
S
S
S
G
D
D
D
D