Datasheet
FDMA1025P Dual P-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMA1025P Rev.B5
www.fairchildsemi.com
1
FDMA1025P
Dual P-Channel PowerTrench
®
MOSFET
–20V, –3.1A, 155m:
Features
Max r
DS(on)
= 155m: at V
GS
= –4.5V, I
D
= –3.1A
Max r
DS(on)
= 220m: at V
GS
= –2.5V, I
D
= –2.3A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
per
formance for its physical size and well suited to linear mode
applications.
Application
DC - DC Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage –20 V
V
GS
Gate to Source Voltage ±12 V
I
D
Drain Current -Continuous (Note 1a) –3.1
A
-Pulsed –6
P
D
Power Dissipation for Single Operation (Note 1a) 1.4
W
Power Dissipation (Note 1b) 0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
TJA
Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86
°C/W
R
TJA
Thermal Resistance Single Operation, Junction to Ambient (Note 1b) 173
R
TJA
Thermal Resistance Dual Operation, Junction to Ambient (Note 1c) 69
R
TJA
Thermal Resistance Dual Operation, Junction to Ambient (Note 1d) 151
Device Marking Device Package Reel Size Tape Width Quantity
025 FDMA1025P MicroFET 2X2 7’’ 8mm 3000 units
MicroFET 2X2
16
5
2
4
3
S1 G1 D2
D1 G2 S2
S2
G2
D1
D2
G1
S1
PIN 1
D1
D2
1
3
2
6
5
4
Free from halogenated compounds and antimony
oxides
July 2014