Datasheet

FDMA1028NZ
Dual N-Channel PowerTrench

MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
x 3.7 A, 20V. R
DS(ON)
= 68 m: @ V
GS
= 4.5V
R
DS(ON)
= 86 m: @ V
GS
= 2.5V
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-Source Voltage
r12
V
Drain Current – Continuous
(Note 1a)
3.7
I
D
– Pulsed 6
A
Power Dissipation for Single Operation
(Note 1a)
1.4
P
D
(Note 1b)
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
173 (Single Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
69 (Dual Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
151 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
028 FDMA1028NZ 7’’ 8mm 3000 units
FDMA1028NZ Dual N-Channel PowerTrench

MOSFET
MicroFET 2x2
S1
G1
D1
S2
G2
D2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
x HBM ESD protection level > 2kV (Note 3)
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Free from halogenated
compounds and antimony
oxides
July 2014
FDMA1028NZ Rev B7
Fairchild Semiconductor Corporation
3
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20
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