Datasheet

Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 PA
–20 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 PA, Referenced to 25qC
–12
mV/qC
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1
PA
I
GSS
Gate–Body Leakage V
GS
= ± 12 V, V
DS
= 0 V ±10
PA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 PA
–0.6 –1.0 –1.5 V
'V
GS(th)
'T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 PA, Referenced to 25qC
4
mV/qC
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –3.1 A
V
GS
= –2.5 V, I
D
= –2.5 A
V
GS
= –4.5 V, I
D
= –3.1 A, T
J
=125qC
60
88
87
95
141
140
m:
g
FS
Forward Transconductance V
DS
= –10 V, I
D
= –3.1 A –11 S
Dynamic Characteristics
C
iss
Input Capacitance 540 pF
C
oss
Output Capacitance 120 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
100 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 13 24 ns
t
r
Turn–On Rise Time 11 20 ns
t
d(off)
Turn–Off Delay Time 37 59 ns
t
f
Turn–Off Fall Time
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 :
36 58 ns
Q
g
Total Gate Charge 7.0 10 nC
Q
gs
Gate–Source Charge 1.1 nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V, I
D
= –3.1 A,
V
GS
= –4.5 V
2.4 nC
FDMA1029PZ Dual P-Channel PowerTrench

MOSFET
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Source–Drain Diode Forward Current -1.1 A
V
SD
Source–Drain Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.1 A
(Note 2)
–0.8 –1.2 V
t
rr
Diode Reverse Recovery Time 25 ns
Q
rr
Diode Reverse Recovery Charge
I
F
= –3.1 A,
dI
F
/dt = 100 A/µs
9 nC
FDMA1029PZ Rev.B4(W)