Datasheet

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FDMA1032CZ

20V Complementary PowerTrench



MOSFET

General Description

This device is designed specifically as a single package

solution for a DC/DC 'Switching' MOSFET in cellular

handset and other ultra-portable applications. It

features an independent N-Channel & P-Channel

MOSFET with low on-state resistance for minimum

conduction losses. The gate charge of each MOSFET

is also minimized to allow high frequency switching

directly from the controlling device. The MicroFET 2x2

package offers exceptional thermal performance for its

physical size and is well suited to switching applications.

Features

x Q1: N-Channel

3.7 A, 20V. R

DS(ON)

= 68 m: @ V

= 4.5V

DS(ON)

= 86 m: @ V

= 2.5V

x Q2: P-Channel

–3.1 A, –20V. R

DS(ON)

= 95 m: @ V

= –4.5V

DS(ON)

= 141 m: @ V

= –2.5V

x Low profile – 0.8 mm maximum – in the new package

MicroFET 2x2 mm

x RoHS Compliant

Absolute Maximum Ratings

=25

C unless otherwise noted

Symbol Parameter Q1 Q2 Units

Drain-Source Voltage 20 –20 V

Gate-Source Voltage

r12

±12 V

Drain Current – Continuous

(Note 1a)

3.7 –3.1

– Pulsed 6 –6

Power Dissipation for Single Operation

(Note 1a)

1.4

(Note 1b)

0.7

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

Thermal Characteristics

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

86 (Single Operation)

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

173 (Single Operation)

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1c)

69 (Dual Operation)

TJA

Thermal Resistance, Junction-to-Ambient

(Note 1d)

151 (Dual Operation)

qC/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

032 FDMA1032CZ 7’’ 8mm 3000 units

FDMA1032CZ 20V Complementary PowerTrench



MOSFET

MicroFET 2x2

PIN 1

S1 G1 D2

D1 G2 S2

D1 D2

 Free from halogenated compounds and antimony

oxides

 HBM ESD protection level >2kV (Note 3)



July 2014

(W)

FDMA1032CZ Rev B5

airchild Semiconductor Corporation

1020



Summary of content (9 pages)

PAGE 1
FDMA1032CZ 20V Complementary PowerTrench MOSFET General Description Features This device is designed specifically as a single package x Q1: N-Channel 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. RDS(ON) = 86 m: @ VGS = 2.5V It x Q2: P-Channel –3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS On Characteristics Q1 Q2 Q1 Q2 Q1 Q2 All 20 –20 VDS = VGS, ID = 250 PA VDS = VGS, ID = –250 μA ID = 250 PA, Referenced to 25qC ID = –250 μA, Referenced to 25qC VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS = 4.5 V, ID = 3.7 A, TJ = 125qC VGS = –4.5V, ID = –3.1 A VGS = –2.5 V, ID = –2.5 A VGS = –4.5 V, ID = –3.1 A,TJ = 125qC VDS = 10 V, ID = 3.
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr (Note 2) VGS = 0 V, IS = 1.1 A (Note 2) VGS = 0 V, IS = –1.1 A Q1 IF = 3.7 A, dIF/dt = 100 A/μs Q2 IF = –3.1 A, dIF/dt = 100 A/μs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.7 –0.8 11 25 2 9 1.1 –1.1 1.2 –1.
PAGE 4
6 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 5 3.5V 3.0V 4 3 2 1 1.5V 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 1.2 0 Figure 1. On-Region Characteristics. 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.
PAGE 5
10 500 VDS = 5V VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A f = 1MHz VGS = 0 V 15V 8 400 CAPACITANCE (pF) 10V 6 4 300 200 Coss 2 100 0 0 Crss 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RTJA = 173°C/W TA = 25°C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RTJA = 173°C/W TA = 25°C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area.
PAGE 6
2.6 VGS = 4 5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V -ID, DRAIN CURRENT (A) 5 3.5V 2.0V 3.0V 4 3 2 1 1.5V 0 1.8 -2.5V 1.4 -3.0V -3.5V 1 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 12. On-Region Characteristics. -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.5 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.1A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = -1.55A 0.16 0.
PAGE 7
1000 f = 1MHz VGS = 0 V ID = -3.1A 800 8 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 -10V 4 600 Ciss 400 Coss 2 200 0 0 Crss 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 Figure 18. Gate Charge Characteristics. 20 Figure 19. Capacitance Characteristics. 50 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100us 1ms 10ms 100ms 1 10s 1s DC VGS = -4.5V SINGLE PULSE o RTJA = 173 C/W 0.1 TA = 25oC 0.01 0.
PAGE 8
FDMA1032CZ 20V Complementary PowerTrench MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.