Datasheet

FDMA2002NZ
Dual N-Channel PowerTrench

MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
x 2.9 A, 30 V R
DS(ON)
= 123 m: @ V
GS
= 4.5 V
R
DS(ON)
= 140 m: @ V
GS
= 3.0 V
R
DS(ON)
= 163 m: @ V
GS
= 2.5 V
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
x RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-Source Voltage
r12
V
Drain Current – Continuous (T
C
= 25°C, V
GS
= 4.5V) 2.9
– Continuous (T
C
= 25°C, V
GS
= 2.5V) 2.7
I
D
– Pulsed 10
A
Power Dissipation for Single Operation
(Note 1a)
1.5 P
D
Power Dissipation for Single Operation
(Note 1b)
0.65
W
T
J
, T
STG
Operating and Storage Temperature –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
83 (Single Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
193 (Single Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
68 (Dual Operation)
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
145 (Dual Operation)
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
002 FDMA2002NZ 7’’ 8mm 3000 units
FDMA2002NZ Dual N-Channel PowerTrench

MOSFET
MicroFET 2x2
S1
G1
D1
S2
G2
D2
D1 G2 S2
D1 D2
PIN 1
S1 G1 D2
x HBM ESD protection level = 1.8kV (Note 3)

Free from halogenated compounds and antimony
oxides



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July 2014
(W)
FDMA2002NZ Rev B5
Fairchild Semiconductor Corporation
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