Datasheet


2009 Fairchild Semiconductor Corporation
FDMA291P Rev B5
FDMA291P
Single P-Channel 1.8V Specified PowerTrench

MOSFET
General Description
This device is designed specifically for battery charge
or load switching in cellular handset and other ultra-
portable applications. It features a MOSFET with low
on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
x –6.6 A, –20V. r
DS(ON)
= 42 m: @ V
GS
= –4.5V
r
DS(ON)
= 58 m: @ V
GS
= –2.5V
r
DS(ON)
= 98 m: @ V
GS
= –1.8V
x Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
MicroFET 2x
2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DS
Drain-Source Voltage –20 V
V
GS
Gate-Source Voltage
r8
V
Drain Current – Continuous
(Note 1a)
–6.6
I
D
– Pulsed –24
A
Power Dissipation for Single Operation
(Note 1a)
2.4
P
D
(Note 1b)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
qC/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
291 FDMA291P 7’’ 8mm 3000 units
FDMA291P Single P-Channel 1.8V Specified PowerTrench

MOSFET
Pin 1
D D G
D D S
3
2
1
4
5
6
Bottom Drain Contact
D
D
D
D
G
S
Drain
Source
RoHS Compliant
Free
from halogenated compounds and antimony
oxides
June 2014