Datasheet

©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C4
www.fairchildsemi.com
1
FDMA3028N Dual N-Channel PowerTrench
®
MOSFET
FDMA3028N
Dual N-Channel PowerTrench
®
MOSFET
30 V, 3.8 A, 68 mΩ
Features
 Max. R
DS(on)
= 68 mΩ at V
GS
= 4.5 V, I
D
= 3.8 A
 Max. R
DS(on)
= 88 mΩ at V
GS
= 2.5 V, I
D
= 3.4 A
 Max. R
DS(on)
= 123 mΩ at V
GS
= 1.8 V, I
D
= 2.9 A
 Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
 RoHS Compliant
General Description
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±12 V
I
D
Drain Current -Continuous (Note 1a) 3.8
A
-Pulsed 16
P
D
Power Dissipation (Note 1a) 1.5
W
Power Dissipation (Note 1b) 0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86
°C/W
Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151
Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160
Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133
Device Marking Device Package Reel Size Tape Width Quantity
328 FDMA3028N MicroFET 2X2 7 ’’ 8 mm 3000 units
G2
S1
G1
D2
D1
S2
S1 G1 D2
S2
MicroFET 2x2
D1 G2
PIN 1
D1 D2
1
2
3
6
5
4
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July 2014