Datasheet

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1
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench
®
MOSFET
FDMA410NZ
Single N-Channel 1.5 V Specified PowerTrench
®
MOSFET
20 V, 9.5 A, 23 m:
Features
 Max r
DS(on)
= 23 m: at V
GS
= 4.5 V, I
D
= 9.5 A
 Max r
DS(on)
= 29 m: at V
GS
= 2.5 V, I
D
= 8.0 A
 Max r
DS(on)
= 36 m: at V
GS
= 1.8 V, I
D
= 4.0 A
 Max r
DS(on)
= 50 m: at V
GS
= 1.5 V, I
D
= 2.0 A
 HBM ESD protection level > 2.5 kV (Note 3)
 Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
 RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
DS(ON)
@ V
GS
= 1.5 V on special MicroFET
leadframe.
Applications
 Li-lon Battery Pack
 Baseband Switch
 Load Switch
 DC-DC Conversion
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 20 V
V
GS
Gate to Source Voltage ±8 V
I
D
-Continuous T
A
= 25 °C (Note 1a) 9.5
A
-Pulsed 24
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 2.4
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
410 FDMA410NZ MicroFET 2X2 7 ’’ 3000 units
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
5
1
6
2
3
4
D
D
S
D
D
G
Bottom Drain Contact
 Free from halogenated compounds and antimony oxides
8 mm
©2009Fairchild Semiconductor Corporation
FDMA410NZ Rev.B4
June 2014