Datasheet

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FDMA420NZ Single N-Channel 2.5V Specified PowerTrench

MOSFET

FDMA420NZ Rev B6

www.fairchildsemi.com

FDMA420NZ

Single N-Channel 2.5V Specified PowerTrench

MOSFET

20V, 5.7A, 30m:

General Description

This Single N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench

process to optimize the R

(on) @V

=2.5V on special

MicroFET leadframe.

Applications

 Li-lon Battery Pack

Features

 R

DS(on)

= 30m: @ V

= 4.5 V, I

= 5.7A

 R

DS(on)

= 40m:@ V

= 2.5 V, I

= 5.0A

 Low Profile-0.8mm maximum-in the new package

MicroFET 2x2 mm

 RoHS Compliant

Absolute Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage r12 V

Drain Current -Continuous (Note 1a)

-Pulsed

5.7

Power dissipation (Steady State) (Note 1a)

(Note 1b)

0.9

2.4

, T

STG

Operating and Storage Junction Temperature Range -55 to +150

TJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 52

C/W

TJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 145

Device Marking Device Reel Size Tape Width Quantity

420 FDMA420NZ 7” 8

mm 3000 units

Pin 1

Drain

Source

Bottom Drain Contact

MicroFET Bottom View 2X2



HBM ESD protection level > 2.5k V typical (Note 3)

 Free from halogenated compounds and antimony oxides

June 2014

Summary of content (7 pages)

PAGE 1
FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. RDS(on) = 30m: @ VGS = 4.5 V, ID = 5.7A RDS(on) = 40m: @ VGS = 2.5 V, ID = 5.0A Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm Applications HBM ESD protection level > 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, Referenced to 25°C 20 V IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 PA IGSS Gate-Body Leakage VGS = r12V, VDS = 0V r10 PA 1.
PAGE 3
PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX ID, DRAIN CURRENT (A) 45 40 35 VGS = 2.5V VGS = 4.5V 30 VGS = 3.5V 25 VGS = 3.0V 20 VGS = 2.0V 15 10 VGS = 1.5V 5 0 0 1 2 3 2.1 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 4 PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX 1.8 VGS = 2.0V VGS = 3.0V VGS = 2.5V 1.5 VGS = 3.5V 1.2 VGS = 4.5V 0.9 10 20 1.6 ID = 5.7A VGS = 4.5V 1.0 0.8 0.6 -80 -40 0 40 80 120 PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX 50 ID = 2.
PAGE 4
2000 VDS = 15V 4 VDS = 20V 3 VDS = 25V 2 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 f = 1MHz VGS = 0V 100 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 6 10us ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Coss 50 0.1 12 Figure 7. Gate Charge Characteristics 10 100us 1ms 1 0.1 Ciss 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 5 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.01 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER Normalized Thermal Impedance, ZTJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA RTJA = 145oC SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve FDMA420NZ Rev B6 5 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.
PAGE 6
Preliminary Datasheet FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.