Datasheet

©2009 Fairchild Semiconductor Corporation
FDMA430NZ Rev B6
www.fairchildsemi.com
1
FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench
®
MOSFET
30V, 5.0A, 40m:
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R
DS
(on) @V
GS
=2.5V on special MicroFET
leadframe.
Applications
 Li-lon Battery Pack
Features
 R
DS(on)
= 40m: @ V
GS
= 4.5 V, I
D
= 5.0A
 R
DS(on)
= 50m:@ V
GS
= 2.5 V, I
D
= 4.5A
 Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
 Free from halogenated compounds and antimony oxides
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage r12 V
I
D
Drain Current -Continuous (Note 1a)
-Pulsed
5.0
A
20
P
D
Power dissipation (Steady State) (Note 1a)
(Note 1b)
0.9
W
2.4
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
o
C
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 52
o
C/W
R
TJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 145
Device Marking Device Reel Size Tape Width Quantity
430 FDMA430NZ 7” 8 mm 3000 units
5
1
6
2
34
D
D
S
D
D
G
Bottom Drain Contact
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
FDMA430NZ Single N-Channel 2.5V Specified PowerTrench
®
MOSFET

HBM ESD protection level > 2.5k V typical (Note 3)

RoHS Compliant
June 2014