Datasheet

May 2010
FDMA507PZ Single P-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
www.fairchildsemi.com
1
FDMA507PZ
Single P-Channel PowerTrench
®
MOSFET
-20 V, -7.8 A, 24 mΩ
Features
 Max r
DS(on)
= 24 mΩ at V
GS
= -5 V, I
D
= -7.8 A
 Max r
DS(on)
= 25 mΩ at V
GS
= -4.5 V, I
D
= -7 A
 Max r
DS(on)
= 35 mΩ at V
GS
= -2.5 V, I
D
= -5.5 A
 Max r
DS(on)
= 45 mΩ at V
GS
= -1.8 V, I
D
= -4 A
 Low Profile - 0.8 mm maximum - in the package MicroFET
2X2 mm
 HBM ESD protection level > 3.2K V typical (Note3)
 Free from halogenated compounds and antimony oxides
 RoHS Compliant
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.
The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous T
A
= 25 °C (Note 1a) -7.8
A
-Pulsed -24
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 2.4
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
507 FDMA507PZ MicroFET 2X2 7 ’’ 12 mm 3000 units