Datasheet

FDMA520PZ Single P-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B3
www.fairchildsemi.com
1
FDMA520PZ
Single P-Channel PowerTrench
®
MOSFET
–20V, –7.3A, 30m:
Features
 Max r
DS(on)
= 30m: at V
GS
= –4.5V, I
D
= –7.3A
 Max r
DS(on)
= 53m: at V
GS
= –2.5V, I
D
= –5.5A
 Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
 Free from halogenated compounds and antimony oxides
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
perfo
rmance for its physical size and is well suited to linear mo
de
applications.
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage –20 V
V
GS
Gate to Source Voltage ±12 V
I
D
Drain Current -Continuous (Note 1a) –7.3
A
-Pulsed –24
P
D
Power Dissipation (Note 1a) 2.4
W
Power Dissipation (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
520 FDMA520PZ MicroFET 2X2 7’’ 8mm 3000 units
5
1
6
2
3
4
D
D
S
D
D
G
Bottom Drain Contact
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)

HBM ESD protection level > 3k V typical (Note 3)
 RoHS Compliant
June 2014